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| SMD Type Transistors PNP Silicon AF an Swiching Transistors BCX42 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS Rating 125 125 5 800 1 100 200 330 150 -65 to +150 215 K/W Unit V V V mA A mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCX42 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector cutoff current Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO Testconditons IC = 10 mA, IB = 0 IC = 100 iA, IB = 0 IE = 10 iA, IC = 0 VCB = 100 V, IE = 0 VCB = 100 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 VCE = 100 V , TA = 85 VCE = 100 V , TA = 125 IC = 100 iA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA IC = 20 mA, VCE = 5 V, f = 20 MHz VCB = 10 V, f = 1 MHz 25 63 40 Transistors Min 125 125 5 Typ Max Unit V V V 100 20 100 10 75 nA iA nA iA iA DC current gain * hFE Collector-emitter saturation voltage * Base-emitter saturation voltage Transition frequency Collector-base capacitance * Pulse test: t 300is, D = 2%. * VCE(sat) VBE(sat) fT Ccb 0.9 1.4 150 12 V V MHz pF Marking Marking DKs 2 www.kexin.com.cn |
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